CSD19538Q3A / MOSFET 100-V / N channel NexFET power MOSFET

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HAOXIN HK ELECTRONIC TECHNOLOGY CO. LIMITED

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Brand Name : TI

Model Number : CSD19538Q3A

Place of Origin : Malaysia

MOQ : 1

Price : contact us

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : contact us

Delivery Time : in stock

Packaging Details : Standard/New/Original

Vgs - Gate-Source Voltage : - 20 V, + 20 V

Qg - Gate Charge : 4.3 nC

Pd - Power Dissipation : 2.8 W

Rise Time : 3 ns

Date Code : 22+

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CSD19538Q3A / MOSFET 100-V / N channel NexFET power MOSFET

Applications

• Power Over Ethernet (PoE)

• Power Sourcing Equipment (PSE)

• Motor Control 3

Description

This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

Product Attribute	Attribute Value
Manufacturer:	Texas Instruments
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	14.4 A
Rds On - Drain-Source Resistance:	61 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	4.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.8 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	2 ns
Height:	0.9 mm
Length:	3.15 mm
Product Type:	MOSFET
Rise Time:	3 ns
Series:	CSD19538Q3A
Factory Pack Quantity:	2500
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	7 ns
Typical Turn-On Delay Time:	5 ns
Width:	3 mm
Unit Weight:	0.000963 oz

CSD19538Q3A / MOSFET 100-V / N channel NexFET power MOSFET

CSD19538Q3A / MOSFET 100-V / N channel NexFET power MOSFET Images

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