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STH315N10F7-2 / TO-263-3 / MOSFETs

HAOXIN HK ELECTRONIC TECHNOLOGY CO. LIMITED
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STH315N10F7-2 / TO-263-3 / MOSFETs

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Brand Name : STMicroelectronics

Model Number : STH315N10F7-2

Place of Origin : China

MOQ : 1

Price : contact us

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : contact us

Delivery Time : in stock

Packaging Details : Standard / New / Original

Operating Temperature : - 55 ℃ to + 175 ℃

Pd - Power Dissipation : 315 W

Vds - Drain-Source Breakdown Voltage : 100 V

Id - Continuous Drain Current : 180 A

Vgs th - Gate-Source Threshold Voltage : 3.5 V

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STH315N10F7-2 / TO-263-3 / MOSFETs

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Product Attribute Attribute Value
STMicroelectronics
Product Category: MOSFET
Si
SMD/SMT
H2PAK-2
N-Channel
1 Channel
100 V
180 A
2.3 mOhms
- 20 V, + 20 V
3.5 V
180 nC
- 55 C
+ 175 C
315 W
Enhancement
AEC-Q101
STripFET
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 40 ns
Product Type: MOSFET
Rise Time: 108 ns
Series: STH315N10F7-2
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 148 ns
Typical Turn-On Delay Time: 62 ns
Unit Weight: 0.139332 oz

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STH315N10F7-2 / TO-263-3 / MOSFETs Images

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